Nonlinear electronic transport behavior in Indium Nitride

Nitrogen-rich indium nitride

Defect studies in n-type indium nitride

Aalto University, P.O. Box 11000, FI-00076 Aalto www.aalto.fi Author Christian Rauch Name of the doctoral dissertation Defect studies in n-type indium nitride Publisher School of Science Unit Department of Applied Physics Series Aalto University publication series DOCTORAL DISSERTATIONS 52/2012 Field of research Engineering Physics, Physics Manuscript submitted 28 February 2012 Manuscript revis...

Mechanisms of 1D crystal growth in reactive vapor transport: indium nitride nanowires.

Indium nitride (InN) nanowire synthesis using indium (In) vapor transport in a dissociated ammonia environment (reactive vapor transport) is studied in detail to understand the nucleation and growth mechanisms involved with the so-called "self-catalysis" schemes. The results show that the nucleation of InN crystal occurs first on the substrate. Later, In droplets are formed on top of the InN cr...

Critical point transitions of wurtzite indium nitride

The optical transmission, photoluminescence, and reflection spectra have been measured on a high-quality wurtzite indium nitride (InN) single crystal in the range of 0.5–20.0 eV. The fundamental bandgap of intrinsic InN has been extracted by taking into account the Burstein–Moss shift, bandgap renormalization and Urbach band tail effects, and found to be very close to the recent strongly re-est...

Electronic structures and transport properties of fluorinated boron nitride nanoribbons.

By applying the nonequilibrium Green's functions and the density-functional theory, we investigate the electronic structures and transport properties of fluorinated zigzag-edged boron nitride nanoribbons. The results show that the transition between half-metal and semiconductor in zigzag-edged boron nitride nanoribbons can be realized by fluorination at different sites or by the change of the f...